s m d ty p e w w w . k e x i n . c o m . c n 1 m o s f e t n-cha nne l mo s f e t 2 sk3 0 1 9 feat ur es low on- r es i s tanc e. f as t s w i tc hi ng s peed. low v ol tage dr i v e ( 2.5v ) m ak es thi s dev i c e i deal for por tabl e equi pm ent. e as i l y des i gned dr i v e c i r c ui ts . e as y to par al l el . drain source gate gate protection diode a bs olut e max imum r at ings ta = 25 p ar am eter s y m bol rati ng uni t dr ai n- s our c e v ol tage v d s 30 g ate- s our c e v ol tage v g s 20 conti nuous dr ai n cur r ent i d 100 conti nuous dr ai n cur r ent p ul s ed * 1 i d p 400 p ow er di s s i pati on * 2 p d 150 m w j unc ti on t em per atur e t j 150 s tor age t em per atur e range t st g - 55 to 150 * 1 p w 10 s , duty c y c l e 1% * 2 w i th eac h pi n m ounted on the r ec om m ended l ands . v m a 1 g a t e 2 s o u r ce 3 d r a i n e lec t r ic al c har ac t er is t ic s ta = 25 p ar am eter s y m bol t es t condi ti ons m i n t y p m ax uni t dr ai n- s our c e b r eak dow n v ol tage v d s s i d = 100 a , v g s = 0v 30 v z er o g ate v ol tage dr ai n cur r ent i d s s v d s = 30v , v g s = 0v 1 ua g ate- b ody leak age cur r ent i g s s v d s = 0v , v g s = 20v 1 ua g ate t hr es hol d v ol tage v g s ( t h ) v d s = v gs , i d = 100 a 0.8 1.5 v v g s = 4v , i d = 10m a 5 8 v g s = 2.5v , i d = 1m a 7 13 f or w ar d t r ans fer adm i ttanc e | y f s | i d = 10m a v d s = 3v, 20 m s input capac i tanc e c i ss 13 o utput capac i tanc e c o ss 9 rev er s e t r ans fer capac i tanc e c r ss 4 t ur n- o n del ay t i m e t d ( o n ) 15 t ur n- o n ri s e t i m e t r 35 t ur n- o ff del ay t i m e t d ( o f f ) 80 t ur n- o ff f al l t i m e t f 80 ns r d s ( o n ) s tati c dr ai n- s our c e o n- res i s tanc e v g s = 5v , v d s = 5v , r l = 500 ,r g e n = 10 i d = 10m a v g s = 0v , v d s = 5v , f= 1m hz pf mar k ing m ar k i ng k n
s m d ty p e w w w . k e x i n . c o m . c n 2 m o s f e t n-cha nne l mo s f e t 2 sk3 0 1 9 ty pic al c har ac t er is it ic s 0 1 2 3 4 5 0 0.05 0.1 0.15 drain current : i d (a) drain-source voltage : v ds (v) 3v 3.5v 2.5v v gs =1.5v 4v 2v ta=25 c pulsed fig.1 typical output characteristics 4 0 0.1m 100m drain current : i d (a) gate-source voltage : v gs (v) 1 10m 3 2 1m 0.2m 0.5m 2m 5m 50m 20m 200m ta=125 c 75 c 25 c ? 25 c v ds =3v pulsed fig.2 typical transfer characteristics ? 50 0 0 1 1.5 2 gate threshold voltage : v gs (th) (v) channel temperature : tch ( c ) 0.5 ? 25 25 50 75 100 125 150 fig.3 gate threshold voltage vs. channel temperature v ds =3v i d =0.1ma pulsed 0.001 1 2 50 static drain-source on-state resistance : r ds (on) (?) drain current : i d (a) 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 20 ta=125 c 75 c 25 c ? 25 c v gs =4v pulsed fig.4 static drain-source on-state resistance vs. drain current ( ) 0.001 1 2 50 static drain-source on-state resistance : r ds (on) (?) drain current : i d (a) 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 20 ta=125 c 75 c 25 c ? 25 c v gs =2.5v pulsed fig.5 static drain-source on-state resistance vs. drain current ( ) 0 5 10 15 20 0 5 10 15 gate-source voltage : v gs (v) i d =0.1a static drain-source on-state resistance : r ds (on) (?) ta=25 c pulsed i d =0.05a fig.6 static drain-source on-state resistance vs. gate-source voltage ? 50 0 25 150 0 3 6 9 channel temperature : tch ( c) static drain-source on-state resistance : r ds (on) ( ? ) ? 25 50 75 100 125 2 1 4 5 7 8 fig.7 static drain-source on-state resistance vs. channel temperature v gs =4v pulsed i d =100ma i d =50ma 0.0001 0.001 0.01 0.02 0.5 forward transfer admittance : |yfs| (s) drain current : i d (a) 0.005 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.05 0.1 0.2 0.1 0.2 0.5 0.002 ta=? 25 c 25 c 75 c 125 c v ds =3v pulsed fig.8 forward transfer admittance vs. drain current 200m reverse drain current : i dr (a) source-drain voltage : v sd (v) 1.5 1 0.5 0 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m v gs =0v pulsed ta=125 c 75 c 25 c ? 25 c fig.9 reverse drain current vs. source-drain voltage ( )
s m d ty p e w w w . k e x i n . c o m . c n 3 m o s f e t ty pic al c har ac t er is it ic s n-cha nne l mo s f e t 2 sk3 0 1 9 200m reverse drain current : i dr (a) source-drain voltage : v sd (v) 1.5 1 0.5 0 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m ta=25 c pulsed v gs =4v 0v fig.10 reverse drain current vs. source-drain voltage ( ) 0.1 1 2 50 capacitance : c (pf) drain-source voltage : v ds (v) 0.5 0.2 0.5 1 2 5 10 20 50 5 10 20 fig.11 typical capacitance vs. drain-source voltage c iss c oss c rss ta =25 c f=1mh z v gs =0v 0.1 10 20 500 switching time : t (ns) drain current : i d (ma) 5 0.2 0.5 1 2 5 10 20 50 50 100 200 1000 2 100 fig.12 switching characteristics (see figures 13 and 14 for the measurement circuit and resultant waveforms) ta =25 c v dd =5v v gs =5v r g =10? pulsed t d(off) t r t d(on) t f
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